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This paper describes the challenges of a 17.5um thin bare Cu wire bonding on aluminum bond pads for a fragile low-k wafer technology, on a BGA package. Previous evaluations have so far focused on 20um and 25um bare Cu wires as a suitable low cost replacement for Au wires. To improve performance, more fragile low-k wafer technology is being developed. In the past, some key technical challenges experienced...
Gold and copper ball bonds were isothermally aged under moist conditions (85°C and 85% relative humidity (RH)) and wet conditions (85°C in DI water with and without NaCl) in an effort to better understand the corrosion mechanisms that operate under moist and wet conditions. The objective of this work is to undertake and report on the initial stages of a research project that aims to compare the performance...
Wire bonding has been the dominant mode of chip to substrate interconnection for many decades. The most common metal used has been gold which is rather malleable and very resistant to oxidation and corrosion. The surge in commodity prices over the last few years has prompted the introduction of copper as a lower cost alternative. While copper has some advantages electrically, thermally and mechanically,...
Advantages of Cu wire bonding, such as less wire sweep, better performance for analog devices, are interpreted by its material properties. Alternative aspect from material properties on Cu wire bonding parameters is proposed to reflect the fact that Cu wire bonding may not necessarily damage the existing under-pad structure of integrated circuit designed for Au wire bonding. The challenge of Cu wire...
Copper has replaced aluminum as the main interconnect material in VLSI, due to its low resistivity and high electromigration resistance. The property of copper coating is a key factor that determines the reliability of interconnects. A special copper coating was prepared by ultrasonic-electrodeposition method in this study, and the microstructure, hardness, wear resistance, adhesion and corrosion...
As copper interconnect structures are shrinking with each technology node novel metals other than PVD Ta(N)/Ta are being introduced as barrier materials. These materials act as seed enhancement layers and enable the Cu filling of the narrowest structures. However, the integration of such metals into the manufacturing of sub-35 nm wide Cu lines produces several challenges which need to be addressed...
The combination of self-formed barrier (SFB) and extreme low-k (ELK) dielectric is an attractive candidate for interconnect integration beyond 28nm-node regarding to low RC delay and Cu filling. Attempt is made to understand the formation mechanism of SFB through combinations with various ELK dielectrics in this study. In terms of wiring and dielectric reliabilities, the combination of MnxOy SFB and...
Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility...
There is growing interest in Cu wire bonding for LSI interconnection due to cost savings and better electrical and mechanical properties. Cu bonding wires, in general, are severely limited in their use compared to Au wires; such as wire oxidation, lower bondability, forming gas of N2+5%H2, and lower reliability. It is difficult for conventional bare Cu wires to achieve the target of LSI application...
There is growing interest in Cu wire bonding for LSI interconnection due to cost savings and better electrical and mechanical properties. Cu bonding wires, in general, are severely limited in their use compared to Au wires; such as wire oxidation, lower bondability, forming gas of N2+5%H2, and lower reliability. It is difficult for conventional bare Cu wires to achieve the target of LSI application...
A new yield loss mechanism is described that is related to the etching of Cu in deionized water. Water that contains high concentrations of dissolved oxygen can etch Cu at the bottom of vias during pre-metallization wet cleans. The etching creates voids in the Cu which remain after metallization, resulting in high resistance and functional fails in the affected array circuits. The dissolved oxygen...
Increased packing density and reduced device size leads to increase in the back-end related delays. This happens as a result of increase in the metal resistance due to decreased line-width and increased capacitance due to a higher density of the interconnects. To minimize the impact of interconnect related delays (RC delay) the semiconductor industry had to, as a first order change, look for metal...
In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivity is classified into non CMP-related type and CMP-related type. Most of the non-CMP type defects are foreign matter coming from the environment or from the processing residues. They can...
A high yielding copper damascene process requires defect-free copper surfaces after Cu polish. Critical defects derive from corrosion processes such as pitting corrosion, galvanic corrosion and excess etching. Changes in process conditions for Cu polish as well as the interaction with Ta polish step in a two-step (Cu/Ta) Ta polish can assist in defect reduction. Since these corrosion defects derive...
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