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This paper presents motor loss and temperature reduction performed with high switching frequency SiC-Based inverter for high speed motor. We developed prototype SiC inverter with proposed SiC gate drivers and custom SiC power modules. The proposed gate driver can reduce switching losses and switching delay time for higher switching frequency. We also developed SiC power modules without anti-parallel...
This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands...
This paper provides a methodology for overall system level design of a high-power density inverter to be used for EV/HEV traction drive applications. The system design is guided to accommodate off-the-shelf SiC power modules in a planar architecture that ensures proper electrical, thermal, and mechanical performances. Bi-directional interleaved DC-DC boost structure and a three-phase voltage source...
Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired...
This paper introduces the development and experimental performance of SiC-Based high power density inverter. The Power density of the developed inverter is about 70kW/litter in volumetric, 50kW/kg in gravimetric. The inverter is forced air cooled 2-level voltage source inverter. In order to achieve higher power density than conventional inverters, we need to reduce losses of inverters or improve cooling...
This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal–oxide–semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits...
The excellent characteristics (low power loss, high speed/high temperature operation) of SiC semiconductors can contribute to realizing smaller power converter with a higher power output. Using our own packaging technology of double-sided cooling and SiC devices, we have developed the new, small 6-in-1 power module with high output power density. If the inductance of the main circuit is large, it...
In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm2 to 250 A/cm2. By using...
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