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The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different AlxGa1-xN/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.
In this paper, we study electrical properties and performance of GaAs nanowire electronic devices by using Monte Carlo method. Instead of quasi 1-D or 1-D configurations, the GaAs nanowire is regarded as 2-D configurations in our study and 2-D Monte Carlo method is developed, in which the surface roughness scattering is taken into consideration to study the size or scale effect on carrier mobility...
This paper elucidates the dc, pulse I-V, microwave, flicker noise, and power properties of AlGaAs/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) after various ex situ sulfur pretreatments. The pHEMTs were pretreated with NH4OH, (NH4)2SX, and P2S5/(NH4)2SX solutions before SiO2 passivation to reduce the GaAs native oxide-related surface states. Stable phosphorus oxides and sulfur...
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