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In the SPM-based microplasma etching system proposed in our previous work, the stable discharge performance of microplasma device in reactive gases is the foundation of the following maskless scanning etching. In order to realize microplasma etching of SiO2 or Si3N4, CHF3 or CHF3/Ar mixtures is chosen as the operating gas. Although discharge characteristics of microcavity plasma devices in rare gases...
A novel maskless micro-nano plasma etching system based on parallel probe actuation is proposed. The advantages of this system are high etching rate, high fidelity, simple-structure, and flexible to fabricate various material. As a key component of the system, a microplasma reactor of metal-dielectric-metal sandwich structure with inverted, square pyramidal hollow cathode is designed and successfully...
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