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In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60...
FinFET devices are extensively investigated due to the prospects for application in the sub-100 nm CMOS integrated circuits fabrication. Small size of the FinFETs and the properties of technological processes strongly influence their electrical characteristics. The random variations of the characteristics lead to a mismatch effect critical from the viewpoint of design and fabrication. In the paper...
A TCAD-based simulation approach is proposed to study the impact of transient coupling that occurs within a generic 3D integration on 65 nm technology based CMOS devices. This coupling is mainly due to signals applied on redistribution layer (RDL) and through-silicon vias (TSV). These both 3D-inherent metal structures may cause variations on normal operating conditions of advanced devices. Influence...
An approach to nanoscale DG FinFET design for LP and HP nanoscale-CMOS applications via S/D engineering [i.e., control of NSD(y)] was proposed, and demonstrated to be viable by device simulations and measurements. The approach exploits the idea of allowing S/D dopants properly distributed in the channel for HP-Vt design. We demonstrated the design approach at the 45nm node. Scaling Lg to Lt10nm, as...
The outlook of performance scaling in high-performance CMOS is explored by using an analytical expression for the intrinsic MOSFET delay. The historical trend of carrier virtual source velocity, as the main driver for continuous performance increase in the past, is presented and prospects of further velocity increase in future technology nodes are discussed. An optimistic scaling scenario with realistic...
The width dependence to the interfacial effect of mis-matching characteristics of a boron doped non-silicided polysilicon resistor has been studied. The fundamental properties for using P+ poly resistor in the integrated circuit(IC) design are better linearity and higher unit square sheet resistance. Typically, the square resistance of a boron doped non-silicided poly-silicon resistors is 30 times...
Predictive MOSFET model is critical for early circuit design research. To accurately predict the characteristics of nanoscale CMOS, emerging physical effects, such as process variations and physical correlations among model parameters, must be included. In addition, predictions across technology generations should be smooth to make continuous extrapolations. In this work, a new generation of predictive...
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