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Si interposers with SrTiO3 (STO) thin film capacitors and their stacking process based on chip-to-wafer bonding have been developed. To reduce defect density in chip-size capacitors, the STO thin films were sputter-deposited at 400degC, and Ru was used as a bottom electrode. The stacking process enables the 50-mum-thick Si interposers to be inserted between an LSI and a board. Maximum capacitance...
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