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A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
Au/IrO2/Si heterostructures were built. Their DC current versus temperature characteristics were experimentally obtained to get the corresponding Richardson plots. From these plots, the Richardson constant was estimated for these devices. Then, from the current-voltage plots at room temperature the series resistance, ideality factor and barrier height were obtained by applying the method proposed...
Schottky barrier single electron/hole transistor (SB-SET/SB-SHT) are manufactured using erbium-silicide and platinum-silicide as source and drain materials. In room temperature, the manufactured SB-SET and SB-SHT showed typical FET behavior with high drive current, 550 and -376 μA/μm, respectively. At 7 K, these devices showed SET and SHT characteristics. The measured coulomb gaps are about 170 mV...
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:1) and growth temperature (130??C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties...
Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being...
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