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We describe here, the design and use of a unique test chip on power and variability (TPV) to measure and report for the first time, the magnitude of leakage and dynamic power dissipation and its variation. This test chip, fabricated in a state-of-the-art 45 nm process node technology, addresses the important issues of variability in power and delay and quantifies them as a function of voltage and...
The lack of good ??correlation?? between pre-silicon simulated delays and measured delays on silicon (silicon data) has spurred efforts on so-called silicon debug. The identification of speed-limiting paths, or simply speedpaths, in silicon debug is a crucial step, required for both ??fixing?? failing paths and for accurate learning from silicon data. We propose using characterized, pre-silicon, variational...
Due to the increased random variations in nanometer silicon process technology as well as voltage and temperature variations, it is very hard to guarantee performance characteristics with traditional corner-based timing analysis method. The variations, together with the issues like crosstalk and jitter, make it difficult to get a good silicon correlation with simulation and to meet target performance...
Explaining the mismatch between predicted timing behavior from modeling and simulation, and the observed timing behavior measured on silicon chips can be very challenging. Given a list of potential sources, the mismatch can be the aggregate result caused by some of them both individually and collectively, resulting in a very large search space. Furthermore, observed data are always corrupted by some...
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