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A robust Cu dual-damascene (DD) interconnect has been developed in a low-density (LD) SiOCH film (k = 2.7) with a low- k sidewall protection layer (SPL) made of plasmapolymerized divinylsiloxane-benzocyclobuten (p-BCB, k = 2.7). A thinned Ta/TaN barrier-metal (BM) structure combined with the low-k SPL was implemented. The SPL covering the DD sidewall in the LD-SiOCH film secures the spacing between...
A Ti/TaN multi-layer can achieve a highly reliable Cu interconnect with a porous SiOC (ELK; k <; 2.5) structure. Ti shows good wettability with Cu and unique properties with extreme low-k (ELK)-structured interconnects. On the other hand, Ta is known to be an effective barrier to Cu diffusion. We confirmed that the Ti barrier is different from the Ta barrier from the viewpoint of metal-oxide behavior...
A novel method for the prediction of early failure (EF) due to a non-visual defect is proposed for the time-dependent dielectric breakdown (TDDB) of low-k dielectrics. The yield-reliability relation model is modified to evaluate the EFs. The effectiveness of the novel method is experimentally confirmed by using a 65 nm technology node. A bimodal lifetime distribution is used to evaluate the lifetime...
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