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In this paper research on nano-carbon structures for applications beyond CMOS devices is reviewed. Progress in the synthesis, processing and integration of ultra-thin conducting carbon films, graphene and nanotubes for applications such as interconnects, transistors, spintronics and sensing are critically reviewed. This paper present a comprehensive study on large scale CVD grown graphene films and...
This paper reports the fabrication and characterization results of a silicon micro mirror fabricated by integrated of top-down fabrication of CNTs thin film and conventional micromachining. The silicon mirror is suspended by CNT hinge and actuated by using electrostatic force through angular vertical comb system. The performance of the mirror had been characterized. Thanks to the excellent mechanical...
From the application aspect, single-walled carbon nanotube (SWCNT) film which contains SWCNTs with all kinds of chiralities is very attractive since it can suppress the differences among individual nanotubes. In this work, a layer-by-layer vacuum filtration method was adopted for the fabrication of SWCNT films with controllable thickness and film density. The electrical transport properties of the...
Characterization of a n-type Field Effect Transistor (FET) made from direct growth and patterning of a dense single wall carbon nanotubes (SWNTs) network on a silicon substrate, using alcohol as source gas, is presented. This SWNTs network film made into FET has a special feature which is significantly different from the amorphous silicon thin film transistor (TFT) or the MOSFET. The primary n-type...
Electron emission from carbon materials has been based on two effects: field enhancement from conducting nanostructures and barrier lowering due to the negative electron affinity of diamond surfaces. Moreover, n-type doping with P and N can enable a low work function. This presentation details the significant scientific issues related to thermionic and field electron emission and describes potential...
We present an extensive characterization of carbon nanotube (CNT) via interconnects grown under various conditions, with particular focus on contact resistance. Si process-compatible elements Ti, Cr, and Al are used as underlayer metals, together with the two most effective catalysts Ni and Fe, to study the growth behaviors and contact resistances of vertically aligned CNTs. The CNT via test structure...
The composite structure of silicon tips and vertical aligned carbon nanotubes (CNTs) was prepared using plasma enhanced hot filament chemical vapor deposition (PE-HFCVD) method on the silicon wafer, and Au/Ni film coated on the substrate was considered as a catalyst. High proportion hydrogen of 96% volume percentage and high total pressure are used during preparing process, and the pure CNTs, pure...
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