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In this paper research on nano-carbon structures for applications beyond CMOS devices is reviewed. Progress in the synthesis, processing and integration of ultra-thin conducting carbon films, graphene and nanotubes for applications such as interconnects, transistors, spintronics and sensing are critically reviewed. This paper present a comprehensive study on large scale CVD grown graphene films and...
We present an extensive characterization of carbon nanotube (CNT) via interconnects grown under various conditions, with particular focus on contact resistance. Si process-compatible elements Ti, Cr, and Al are used as underlayer metals, together with the two most effective catalysts Ni and Fe, to study the growth behaviors and contact resistances of vertically aligned CNTs. The CNT via test structure...
Experimental demonstration of wafer-scale growth of well-aligned, dense, single-walled carbon nanotubes on 4" ST-cut quartz wafers is presented. We developed a new carbon nanotube (CNT) wafer-scale growth process. This process allows quartz wafers to be heated to the CNT growth temperature of 865degC through the alpha-beta phase transformation temperature of quartz (573degC) without wafer fracture...
We have proposed batch fabrication of silicon pyramids with upward CNTs on the tips at one time by a chemical vapor deposition (CVD) process. To synthesize upward CNTs on the pyramid tips, an upward electric field was applied to the silicon pyramid array during the CVD process. By electric field simulation and verifying experiment on silicon one-dimensional array structures, we found that CNTs tended...
Carbon nanotube (CNT) is found to be an amazing material for nanoelectronics due to its unique properties. It provides the possibility of miniaturizing the traditional electronic elements. Recently, people have been focusing on exploring its applications on optoelectronics because CNT is a direct bandgap material and its bandgap is inversely related to its diameter. Thus, it is ease for photon adsorption...
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