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Single step growth of crystalline silicon on insulator (c-SOI) substrates based on rare earth oxide (REO) insulator layers are presented. Growth of crystalline REOs on silicon is possible due to their unique lattice matching to twice the lattice spacing of silicon. The single crystal nature of REOs make further silicon overlayer growth with moderate defect densities possible. In this paper we present...
The size of Si nanocrystals in silicon rich oxide has been varied by depositing this material in multilayer arrays. They are possible candidates for one dimensional quantum devices. A study based on TEM, Raman and XRD measurements is presented.
In the present work we have synthesized low density aligned carbon nanotubes using ethanol as a precursor and ferrocene as a catalyst by simple thermal chemical vapor deposition (CVD) method on silicon substrates. The synthesis involves the pyrolysis of ethanol/ ferrocene solutions. Mist of the hydrocarbon/catalyst is produced by medical nebulizer and nitrogen gas is used as the carrier to the large...
Formation of bump defect on the surface of silicon nitride film deposited on top of phosphorus doped amorphous silicon layer was studied. The bump defect formation was found to be caused by localized phosphorus segregation on polysilicon surface. Wet chemical treatment of silicon surface involving HF- H2O2 chemistries were found to reduce bump defect formation.
Investigations on the piezoresistive effect of poly-silicon nanofibns (PSNFs) have not been presented, since it is considered that their piezoresistive properties can become worse with film thickness decreasing. However, our experimental results indicated that the PSNFs (~100nm in thickness, even thinner) had a high gauge factor (>30) and low temperature coefficients of resistance and gauge factor,...
The influence of film structure on temperature characteristics of polysilicon nanofilms (PSNFs) was reported in this paper. Samples were deposited by LPCVD with different film thickness and deposition temperature. The microstructure of films was characterized by SEM, TEM and XRD. By measuring the resistivity and the gauge factor of samples at different temperatures, temperature coefficients of the...
Summary form only given. The controlled synthesis of defect-free Si nanowires with small diameters is a prerequisite to realize Si nanowire based electronics and photonics devices. The crystallinity of vapor-liquid-solid (VLS) grown nanowires can be very good and some times termed as defect-free. Here, the authors report the size dependent defects in Si nanowires grown epitaxially in <111> as...
In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS...
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