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The ATLAS experiment is planning a major upgrade of its tracking detectors during the Phase-II LHC shutdown, to better take advantage of the increased luminosity of the HL-LHC. The layout of the Pixel Tracker is undergoing an optimisation and will be finalised in 2017. The various layouts are presented. A description of the supporting structures, along with results from testing of prototypes are also...
III-nitride nanowires and disk-in-nanowire heterostructures grown on silicon substrates have been used to realize light emitting diodes (LEDs) [1, 2] and diode lasers [3, 4]. We have recently demonstrated edge-emitting disk-in-nanowire diode lasers, in which the gain region consists of multiple InxGa1−xN (0.3≤×≤0.85)/GaN disks and the emission wavelength varied in the range of 0.53 to 1.2 μm [4]....
This paper reports on a measurement which shows for the very first time that uncooled non-quasi static detectors with wide bandwidth integrated in a 32 × 32 pixel focal plane array in standard 65 nm bulk CMOS silicon technology are able to detect non-amplified black-body radiation. With its integrated readout electronics, this “THz camera” shows a noise equivalent temperature difference (NETD) of...
The emergence of Internet of Things (IoT) has brought forth new opportunities by seamlessly integrating the physical world using computing, sensing, and wireless networks, transforming it into a cyber-physical system. An essential building block enabling an IoT is a sensing system. The use of “near-field communication (NFC)” has gained attention in recent years, as it enables low-power short-range...
The space radiation induced displacement damage effects on the performance of the Silicon Drift Detector (SDD) based X-ray spectrometer has been studied using X-ray (Fe-55) and gamma ray (Co-60) radiations. The spectroscopic performance of the SDD based spectrometer degrades due to radiation damage during the transit and in-orbit operations. Silicon detectors are sensitive to displacement damage which...
In this work we present new developments of Silicon Drift Detectors (SDDs) and low noise CMOS read-out electronics for a possible use in different X-ray spectroscopy applications, from nuclear physics experiments, to detection systems at synchrotron light sources, to XRF (X-Ray Fluorescence) instrumentation. The detectors can be operated in different working conditions, from room temperature, avoiding...
Opto-electrical characteristics of Si-based blocked-impurity-band (BIB) detector are investigated by combing experiment with simulation. The measured black-body response characteristics at different temperature are discussed. The simulated dark current characteristics with different thicknesses of blocking layer are also presented by taking into account impurity-band effects.
We demonstrate the design, fabrication and characterization of plasmonic enhanced silicon photo-detector for infrared light. Theoretical model, experimental results and comparison between different geometric configurations will be presented and discussed.
The Ge0.9Sn0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.
The ALICE Collaboration is preparing a major upgrade of the experimental apparatus, planned for installation in the second long LHC shutdown in the years 2018–2019. The key element of the ALICE upgrade is the construction of the new high resolution Inner Tracking System (ITS). It will be made of seven concentric detector layers based on a 50μm thick CMOS pixel sensor with a pixel pitch of about 30...
We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 µs to 102 µs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of...
Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity...
After more than 3 years of successful operation at the LHC, we report on the operation and performance of the Semi-Conductor Tracker (SCT) functioning in a high luminosity, high radiation environment. The SCT is part of the inner tracking system of the ATLAS experiment at CERN and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. We find 99.3% of the SCT modules are...
In this study we present the performance evaluation of a 6×6 Gd3Al2Ga3O12:Ce (GAGG:Ce) pixellated scintillator with 2×2×5mm3 crystal size elements, coupled to a silicon photomultiplier array (ArraySL-4). Evaluation was carried out with low energy isotopes i.e. 57Co and 99mTc. A symmetric resistive charge division matrix was used reducing array's 16 outputs to 4 position signals. A Field Programmable...
The General Antiparticle Spectrometer (GAPS) experiment is an indirect dark matter search that aims to detect low-energy antideuterons resulting from dark matter annihilations and decays in the Galactic halo. Layers of semiconducting lithium-drifted silicon (Si(Li)) tracking detectors are essential to the success of the GAPS detection and background rejection scheme, requiring ∼22.5 square meters...
Performance of Silicon Photomultipliers (SiPM) [1] strongly depends on bias voltage and temperature. The key aspect in low light detection is precision and stability of SiPMs gain. These requirements can be met by delivering accurate bias and keeping temperature on constant level. It is not very demanding task in case of single SiPM. However, in applications consisting of thousands of SiPMs it is...
We have carried out the passive measurement of cold objects down to liquid nitrogen temperature at 1.5–2.5 THz using a 4 K-cryocooled terahertz (THz) photoconductive detector. We measured output signals of THz radiation from five materials of a 2 mm-thick acrylic plate, a 0.1 mm-thick pure H2O, a 2 mm-thick high-resistivity silicon substrate, a #2010 black velvet coated plate, and a gold plate as...
Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10−14 WHz−1/2).
We report chip-scale electro-mechanical detection of near-IR optical intensity modulation at 174.2MHz and 1.198GHz in silicon. This constitutes the first experimental demonstration of a photon to phonon translator in a CMOS compatible platform.
We present the design, fabrication and experimental evaluation of a unique micro gas chromatography (μGC) column with an integrated micro thermal conductivity detector (μTCD). The resistors are dry released to form 170μm diameter coils. The high isolation of the sensing element requires only 13mW and sub-6ms to ramp up to 100°C and in turn an improved sensitivity by an order of magnitude over our...
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