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Low-cost, low-power, and high-sensitivity System-on-Chip (SoC) Hall Effect sensors for 0.18μm and 0.13μm technologies and beyond are developed in this work. A best-inclass current-related sensitivity Si of 418 V/A∗T is achieved by a Hall device with an area of 42 μm × 42 μm. Small offset voltage ranges within +/−1.05 mV, as well as excellent sensor reliability, are demonstrated. The Hall sensors are...
This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor...
The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.
This paper demonstrates the use of an amplifier to strengthen the horizontal magnetic field of parallel vertical Hall-effect device (VHD). In this study, parallel VHD structure is used to reduce the cross-coupled noise. The guard ring is used to confine the conductive channel width for better device sensitivity. The sensitivity of the parallel VHD can be improved by using an amplifier, which amplifies...
This paper reports the first three-dimensional (3D) Hall sensor with isotropic sensitivity for the three spatial components of the magnetic field. The silicon device has the shape of a hexagonal prism with symmetric sets of three contacts on its top and bottom surfaces. Sending currents obliquely across the device allows one to operate it as three mutually crossing, identical, and effectively orthogonal...
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
This paper reports on the piezo-Hall effect in CMOS-based five-contact vertical Hall sensors (VHS) able to measure in-plane magnetic field components. The geometry of such devices and the characteristic current flow in the deep n-wells strongly differ from those of structures used so far to characterize the piezo-Hall response. In contrast to standard planar Hall plates, homogeneous mechanical in-plane...
This paper reports a microfabricated pressure sensor based on the Hall effect. A special structure is designed to characterize the pressure with a Hall voltage. To describe the properties of the devise an electromagnetism model and a mechanical model is developed. The sensor is tested under the pressure ranges from 300 hPa to 1100 hPa. The results show that the output voltage is linear to the pressure...
We present for the first time a new concept for low-cost fabrication of a monolithic 3-axis MEMS compass using integrated permanent magnets and based on a technology compatible with inertial MEMS sensors. Piezoresistive gauges of nanometric scale enable to reduce the sensor size without sensitivity loss. Magnetometers were designed for sensitivities of 9V/T and resolutions less than 10nT/√Hz at a...
This paper presents a method to calibrate arbitrarily shaped planar Hall plates without the need for applying a magnetic field. Using the method of conformal mapping, it is shown that magnetic sensitivity parameters can be extracted from six independent resistance values measurable in the absence of a perpendicular magnetic field Bperp. Remarkably, no prior knowledge of the device geometry is required...
Among the sensors able to be integrated with VLSI technologies, the gated micromagnetodiode is one of the most attractive magnetic sensors due to its simple design, small size and good sensitivity. Micromagnetodiodes have been fabricated on Silicon-On-Insulator technology. Experimental results concerning magnetic sensitivity, current-voltage characteristics and transconductance are compared to simple...
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