The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Among the sensors able to be integrated with VLSI technologies, the gated micromagnetodiode is one of the most attractive magnetic sensors due to its simple design, small size and good sensitivity. Micromagnetodiodes have been fabricated on Silicon-On-Insulator technology. Experimental results concerning magnetic sensitivity, current-voltage characteristics and transconductance are compared to simple...
Silicon-On-Insulator transistors are used with a double gate control. By this way, a fully inverted silicon film (interface and film volume) is obtained. This method allows us to greatly enhance the device performance, in particular the subthreshold swing, transconductance and drain current. Simulated and experimental characteristics on SIMOX structures are analysed to study the new device.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.