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In this paper, wafer level transfer of graphene on to a dielectric substrate is demonstrated based on SiO2-SiO2 fusion bonding and de-bonding processes. The developed technique allows to transfer graphene on 200 mm wafer without any contamination; thus CMOS compatible. The experimental data verifies the successful transfer of the graphene on to another substrate with high quality and a yield value...
Matrix interferences remain one of the biggest problems for wafer VPD-ICPMS analysis. It is reported here that a few metals such as Ti, Ni, Ga and Ge have been successfully resolved from thick SiO2 matrix interference by a new evaporation method.
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 µO·cm) was obtained at 400 °C by PEALD, which is close to the resistivity...
In this work we use atomic force microscopy to investigate the influence of the annealing temperature on the formation of nano-clusters in our growth technique for carbon nanotubes. Cluster formation is carried out just before in situ growth of carbon nanotubes from a methane feedstock by means of catalytic chemical vapor deposition where the clusters act as the catalyst. Since cluster size and distribution...
During Ti/TiN barrier metallization of a shared contact in SRAM, an NH3 soak treatment selectively deoxidized silicon oxide on NiSi at the gate shoulder, improving the resistance of the contact. This deoxidizing NH3 soak treatment drastically reduced the drawbacks of conventional NH3 plasma treatment: plasma-induced damage of gate oxide and excessive nitridation of Ti/TiN. Although NH3 gas does not...
Crystalline silicon photovoltaic (PV) industry is growing at an average rate of ~ 15%. Continuing carbon-based fuel depletion in combination with increasing green house effects will continue to add to this robust growth trend. Conservative estimates indicate that PV market will reach ~ 100 GWp/year before the year 2020. In order to sustain such production levels, impact on materials and supplies supporting...
The composite structure of silicon tips and vertical aligned carbon nanotubes (CNTs) was prepared using plasma enhanced hot filament chemical vapor deposition (PE-HFCVD) method on the silicon wafer, and Au/Ni film coated on the substrate was considered as a catalyst. High proportion hydrogen of 96% volume percentage and high total pressure are used during preparing process, and the pure CNTs, pure...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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