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This paper presents the results of the development and use of a full bridge GaN high electron mobility transistor (HEMT) converter used in an inductive power transfer (IPT) application. Experimental results using a Si MOSFETs converter in an IPT setup has previously been reported. By using GaN HEMTs instead of Si MOSFETs, the converter efficiency can be increased over a broad range of operating points...
We explore the intrinsic loss in power switches seen when they undergo charging and discharging of their output capacitance. The intrinsic loss occurs even if switching is carried out at zero current and no on-state current is conducted, and accidental turn-on is avoided. The intrinsic loss cannot be eliminated by using soft-switching schemes and essentially sets an upper limit for the switching speed...
This work demonstrates the suitability of AlGaN/GaN-on-Si Schottky diodes in a non-isolated buck converter for LED applications. To the authors' knowledge, this is the first time that AlGaN/GaN-on-Si Schottky diodes have been employed as flyback diodes in a non-isolated buck converter. First the diodes are specifically developed and characterized. Afterwards the diodes are tested in an advanced non-isolated...
A silicon carbide (SiC) class E inverter for 6 MHz mid-range inductive power transfer (IPT) has been experimentally shown to offer improvements of 13% in efficiency compared to a previous state-of-the-art silicon (Si) equivalent, whilst delivering 100 W to the load. Using newly available ultra-low gate charge half-bridge GaN modules from Texas Instruments, a custom resonant gate drive has been designed...
As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals...
A 2:1 351 V hard-switched boost converter was constructed using high-voltage GaN high-electron-mobility transistors grown on Si substrates and GaN Schottky diodes grown on Sapphire substrates. The high speed and low on-resistance of the GaN devices enables extremely fast switching times and low losses, resulting in a high conversion efficiency of 95% with 425-W output power at 1 MHz. The boost converter...
Micro-electro-mechanical comb-drive actuators made of GaN crystal are studied for an integrated a tunable GaN optical device. The GaN crystal was grown on a Si substrate by metal-organic chemical vapor deposition (MOCVD) with a low-temperature buffer layer. Selectively etching the Si substrate by XeF2 gas, the GaN thin crystal layers are self-supported in air. Due to the residual stress by the crystal...
A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si<;111>. The very low dynamic onresistance (Rdyn ≈ 0.23 Ω) and very low gate-charges (e.g. Qgate ~15 nC at Vos = 200 V) result in minor transistor losses. Together with a proper design of the passive components and the use of SiC diodes, very high overall efficiencies are...
A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the...
We report the DC and switching performance of a normally-off 5 A/1100 V GaN-on-Si device. The device had a breakdown field of 95 V/??m and a VB2/Ron,sp of 272 MW/cm2. A 360 V/180 W boost converter was operated at 200 KHz, with an efficiency >92%. Respectively, these values are the highest for a normally-off GaN-on-Si device.
GaN smart power chip technology has been realized using GaN-on-Si HEMT platform, featuring monolithically integrated high-voltage power devices and low-voltage peripheral devices for mixed-signal functional blocks. Two imperative functional blocks for smart power applications with wide-temperature-range stability are demonstrated. The first one is a voltage reference generator, and the second one...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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