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Novel designs for high-efficiency millimeter wave zero-bias detectors are presented. As the renowned backward diodes are extensively exploited in the utilization of zero bias detectors due to its preferable conduction for small reverse biases, the single-handed diode detectors reveal its inherent capabilities by the semiconductor processes which the detectors are made from. The selected process chiefly...
We present GaAs pHEMTs demonstrating output power over 1 W/mm in Ka-band at an operating voltage of 8 V. DC, RF and reliability results are reported. Continuous wave load pull tests at 35 GHz show peak power added efficiency of 52% and associated gain of 8 dB. The saturated output power of 1.2 W/mm is achieved. Power performance improvement is attributed to a new dielectrically defined 0.15 μm gate...
In this paper, the design and characterization of a broadband image reject mixer for the next generation of point to-point microwave links is presented. The manufacturing has been made in a commercially available 0.15 mum gate length GaAs mHEMT technology. The measured performance demonstrates a conversion loss of 9 dB and an image rejection ratio of 25 dB on average across the full E-band (71-76...
A 94 GHz single balanced mixer in 3-dimension was successfully fabricated. The GaAs-based low loss transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs), have been developed using surface micromachining technology, and the DAML-based hybrid ring coupler is successively fabricated. We have developed the high-performance 94 GHz single balanced active mixer using hybrid ring coupler...
This paper presents the results obtained both by experimental measurements and numerical simulations carried out on state-of-the-art Field-Plated GaAs-based pHEMTs. The effect of field-plate length on DC and RF operation of pHEMTs will be discussed showing that the adoption of an optimal field-plate structure can significantly boost the device RF power performance, resulting in power density up to...
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