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The Al–Al4C3 nanocomposite was produced via mechanical alloying of Al 6 wt% C mixture for a predetermined time (up to 20 h), followed by annealing. The structural evolution was characterised via X-ray diffraction and transmission electron microscope equipped with electron energy loss spectrometer. In addition, focused ion beam–scanning electron microscopy was used for locating and analysing the reinforcing...
Microcrystallines of bio-upconversion (UC) phosphor NaYF4:Yb3+/Er3+ were prepared by the complex precipitation method and the hydrothermal method in the presence of sodium citrate. The precusor synthesized by the complex precipitation method was annealed at different temperature, and another was hydrothermal treated at different time. The structure, morphology and upconversion fluorescence of the...
A simple process is presented for the preparation of TiO2 nanoparticles by Co-precipitation method. This process is relatively cheaper and by using different variation we can control particle size and shape. TiCl4 was used as primary precursor along with Na2CO3 for synthesis of Rutile nanoparticles. Synthesis was done with and without modifier. Structural characterizations of samples were performed...
LaVO4:Eu3+ nanoparticles were synthesised successfully through a ethylene glycol route at a low temperature of 140°C. The structural, thermal and optical properties of the prepared samples were characterised using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), thermogravimetric and differential thermal analysis (TG-DTA) and Fourier transform infrared (FTIR) and photoluminescence...
Al-doped ZnO thick films were prepared by sol-gel method, then which were annealed respectively at 500°C, 700°C and 900°C. The structure of these samples was studied by XRD and SEM. Moreover, the influence on gas sensing properties of the films, result from different Aluminum-doped concentration and different annealing temperature, were mainly researched. Results showed...
In the present studies, electroless ternary Ni-Co-P alloy deposits were prepared in an alkaline bath and characterizations were carried out to ascertain their properties such as composition, structure, phase transformation behavior and microhardness. The effect of various anions of the metallic sources was studied on the structure and properties of the ternary deposits. The different anionic bases...
P-doped silicon rich oxide (SRO) /silicon dioxide (SiO2) superlattices, deposited by sputtering method under different substrate temperatures, were treated using conventional furnace annealing or rapid thermal annealing (RTA). Raman and X-ray diffraction (XRD) were used to characterize the samples. Results show larger nanocrystal size is formed by furnace annealing than by RTA. High crystallinity...
In this work a very low cost and conventional technique was used to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF).The Ge layer was deposited onto the PS by thermal evaporation.Subsequent annealing at 650°C and 750 C for 30 mins were done to drive in...
The purpose of this paper is to investigate the affluence of annealing atmosphere condition towards the formation of titania nanoparticles for photocatalytic application. The design and fabrication of titania powder is modified from Parkody and Arakiamary using titanium isopropoxide as precursor and annealed at temperature of 300°C for 4 hours. Distinct peaks of pure anatase are present at 25.4°,...
Bimetals (Na, Mg, Li, Cr) doped nanotitania was prepared using a modified hydrothermal method from a titanium mineral. The samples, along with a commercial sample, were then annealed from 873 K to 1273 K, at 100 K intervals. Both samples were characterized using a variety of methods such as the XRD (crystallite size and phase conversion temperature), SEM (morphology) and BET (surface area). It was...
SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied...
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k = 2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration...
The multilayer compound thin films, consisted of metal oxides (TiO2 and NiO) prepared by dc magnetron sputtering technique, have been studied. The structural, compositional, electrical and gas sensing properties have been investigated by XRD, GDOES and Van der Pauw method considering changes in layout, annealing temperature and addition of Au noble metal catalyst. The Au modified compound oxides exhibit...
In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current...
In this paper, we mainly study the UV irradiation and soak time effect on the leakage current of BLT thin films. The BLT thin films were prepared on Pt/Ti/SiCVSi substrates to get the desired thickness of about 365 nm. The newly formed multilayer films were annealed at 750 °C for 1 h in oxygen ambient. The Pt top electrodes, with a size of 0.0314 mm2 or so, were deposited by sputtering. The leakage...
A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix....
In this work, filtered cathodic vacuum arc (FCVA) has been used to form aluminium oxide thin films, which is a promising method not only due to the characteristics of high ionization ratio and high ion energy (50 eV ~ 150 eV) but also the effective removing of the macroparticles and therefore resulting in high quality films. The films were grown on Si (100) and quartz substrates at room temperature...
In this paper, the magnetic properties of p-type Zn1-xMnxO powders are reported. This are prepared from the decomposition of an oxalate precursor Zn1-xMnxC2O4.H2O. The oxalate precursor is obtained by coprecipitation of 50 ml of a 0.4mol/L aqueous solution of Zn and Mn acetates and the same volume of a 0.4 mol/L solution of oxalic acid. The mixed solution is stirred for 2h at room temperature. We...
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealing because of the potential for increased device performance and yield. This paper will discuss the use of a dual beam laser spike annealing (LSA) to form...
The development of the MilliSecond Anneals (MSA) technology allows the use of short dwell time coupled with a high peak temperature in order to significantly reduce the global thermal budget. These points are fundamental in the phase transformation occurring in silicide materials: the high temperature allows the phase change and the short dwell time reduces the materials ability to diffuse and create...
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