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Based on MOS capacitors, this work aims to study the thermal and electrical characteristics of HfLaON with different nitridation treatments by evaluating the device properties and monitoring the induced changes.
The electrical characteristics of a-IGZO thin-film transistors (TFTs) with HfO2 and HfON/HfO2/HfON (NON) tri-stack gate dielectrics are comparative investigated. Experimental results indicate that NON gate dielectric can effectively improve interface properties and enhance device reliability compared to HfO2 gate insulator. Bottom gate a-IGZO TFTs with NON gate dielectrics exhibit improved performance...
SOI multiple-gate devices (MuGFETs) have shown to be promising choices to continue scaling. The devices show excellent gate control and thus reduced short-channel effects. Additionally, by using high-k dielectrics a gate leakage current reduction can be achieved. The incorporation of nitrogen into these high-k materials can improve their thermal stability, reduce the dopant penetration and allow further...
The impact of N on HfAlON dielectrics has been extensively studied in devices with TaN metal and poly-Si gate electrodes. A similar trend of the N effects was observed in both TaN and poly-Si devices in terms of equivalent oxide thickness, gate leakage current, threshold voltage (Vth), transconductance, and subthreshold swing. However, compared to the HfAlON with TaN metal gate, a severe Vth instability...
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