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Editor’s note: Process variations, aging and wearout, are nonidealities that lead to suboptimal system performance and increased power. In order to understand the effects of these degradation effects, until now, researchers have investigated them thoroughly, but separately from each other. What this article shows is that process variations and wearout are not independent from each other and they need...
The availability and efficiency of reliability simulators for analog ICs is becoming critical with the scaling of devices down to the nanometer nodes. Two of the main challenges here are how to simultaneously include different sources of unreliability (such as the time-zero or spatial variability and the aging or time-dependent variability), and how to account for the self-induced changes in device...
In this paper, we show that dynamic voltage and frequency scaling (DVFS) designs, together with stress-induced BTI variability, exhibit high temperature-induced BTI variability, depending on their workload and operating modes. We show that the impact of temperature-induced variability on circuit lifetime can be higher than that due to stress and exceed 50% over the value estimated considering the...
In this paper a Reliability-AwaRE (RARE) method based on the gm/ID-methodology is presented which allows designers of integrated analog circuits to consider process as well as environmental variations and aging effects already at early design stages. The proposed method makes aging simulations on system level superfluous by utilizing a stochastic Look-Up table. The stochastic LUT contains simulated...
Reliability has become a critical challenge in integrated circuit design in today's CMOS technologies. Aging problems have been added to the well-known issues due to spatial variations that are caused by imperfections in the fabrication process. In this sense, transistor wear-out phenomena such as Bias Temperature Instability (BTI) and Hot Carriers (HC) cause a time-dependent variability that is added...
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