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Gallium Nitride (GaN) high electron-mobility transistors (HEMTs) can operate at very high power-density levels, which may cause a significant temperature rise in the transistor channel. In addition, surface and substrate energy levels, or “traps,” can cause strong dispersion effects from pulsed – down to dc timescales. Such effects, for both simulation accuracy and device reliability purposes, must...
During Short-Circuit (SC) operations, strong current oscillations of IGBTs can appear. Simulation studies also confirm this. No parasitic inductances are required for such oscillations. A simplified equivalent circuit of the device, which is basically an RC oscillator, is able to reproduce the oscillations. The occurrence of oscillations depends on the model parameters, which can be related to the...
This paper describes the study of effect of variation of topological changes on parameters of pseudomorphic HEMTs. Devices with 2 gate fingers, having gate width of 150 ??m, source-drain spacing of 4 ??m and 3 ??m, and with two different gate structures, viz., ?? and T types were fabricated. On-wafer measurement of S-parameters for different devices was done from 100 MHz to 40 GHz under different...
A model has been developed which can more accurately represent dynamic transport in combinations of one dimensional ballistic electron waveguides such as carbon nanotubes. The model parameters are just the Fermi velocity and conductance of the electron gas , thus avoiding the confusing quantum capacitance and conductance terms. Logical extensions of this model should permit design and simulation of...
A charge-control model of the BMFET, based on a physical analysis of its operation is presented and discussed. This model is used to derive an equivalent circuit of BMFET capable of describing, with continuity, both bipolar and unipolar regions of its characteristics. The equivalent circuit is presented in a form suitable to be easily incorporated in a circuit simulator such as SPICE.
In this paper we investigate the small-signal properties of polycrystalline-silicon MOSFET's by means of a newly-developed device-analysis program. The physical model of the grain-boundaries includes both donor and acceptor energy-distributed traps and accounts for time-dependent carrier-storage. The above phenomena are shown to be responsible for anomalously-large parasitic capacitances, which can...
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