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A new analytical model based on the Wentzel–Kramers–Brillouin approximation for MOSFET-like 1-D ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi–Dirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing...
On the nanoscale, electrical currents behave radically different compared to on the microscale. As the active regions become comparable to or smaller than the mean-free path of the material, it becomes necessary to describe the electron transport by quantum-mechanical methods instead of using classical relations like Ohm's law. Over the past decade, methods for computing electron tunneling currents...
In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of different Tunnel FET structures is investigated. In both the SOI and the DG TFET architectures we have simulated, up to 1 order of magnitude of underestimation...
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