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Further miniaturization of large scaled integrated circuit is hinder by ability to overcome some difficulties with narrower junction formation. A Low energy ion implantation is the most commonly considered the technique of this time but this techniques full with unrealistic limitation where crystal damage is unavoidable and this limitation further aggravated by lacking using for different materials...
Multiple champion solar cells have pin configurations including interdigitated back contact cells, heterojunction with intrinsic thin layer cells, and most recently the 41% efficiency Ga0.5P/Ga0.99In0.01As/Ge cell. The motivation for such structures is not widely understood. This proposed model is based on Shockley's fundamental assumption that open circuit voltage is determined by the splitting of...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
By means of two-dimensional device simulation the influence of the Ge fraction (x) in the base of Si/Si1-x, Gex-HBTs on the transit frequency is investigated. The calculated results are compared to experimental data.
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