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Molecular Cluster Ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 20nm node and beyond with stringent requirements for ultra-shallow depths and very low thermal budgets. We present here the review of molecular cluster ion (like B18H22, C7H7, C16H10 species) advantages with their special property of creating self-amorphous layer even at...
Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced...
The demanding requirements for low power devices are stimulating new technological schemes. Cluster and cold implants have arisen as new strategies for dopant incorporation oriented to the formation of amorphous regions with reduced end-of-range defects. In this work we have used different atomistic simulation techniques to study the phenomena involved in these types of implant. The basis for the...
We have studied the influence of Si surface on damage generation and recombination using classical molecular dynamics simulations. We have found that, when approaching to the surface, damage generation is enhanced due to weaker atomic bonding. Furthermore, generated damage is more stable as it reveals the mean lifetime of defects and the activation energy for recombination. Therefore near the surface...
We report here the use of a novel cluster carbon (C7H7+) implant along with n-type source drain dopant implants (As and P2) to form an embedded Silicon-Carbon (Si:C) layer. The implanted wafers were annealed using millisecond flash anneal (fRTP) followed by a post impulse spike RTP anneal (iRTP) for deactivation studies. The percentage of substitutional carbon ([C]subs) in the formed Si:C layer is...
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