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The surface recombination velocity (SRV) characteristic of deep-level defects at Si interfaces with dielectric thin films was obtained from conductance measurements on metal-insulator-semiconductor capacitor (MISCAP) devices. The dielectrics in contact with Si were thermal SiO2 (Tox), chemical SiO2, and atomic layer deposition (ALD) Al2O3, which were annealed and exposed to a low flux of X-rays. A...
Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental data.
Monte Carlo (MC) simulation of thin oxide evaporation from silicon surface was carried out. Including in MC model chemical reactions of creation and dissociation of silicon monoxide during annealing makes it possible to simulate evaporation of a thin oxide layers. It was shown, that defects in the oxide matrix provoke starting of the layer dissociation processes.
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