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Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH3 during Ge deposition gives n-type poly-Ge with...
Silicon photonics is a rapidly advancing technology. Silicon based slot-waveguides for high optical mode confinement of quasi-TE (vertical slot) and quasi-TM (horizontal slot) mode have been demonstrated independently. These structures are highly birefringent, which limits their usability in photonic devices. A nonbirefringent structure based on slot waveguide is proposed in this paper. The intensity...
The novel composite amorphous/nanocrystalline thin-film silicon has been fabricated by plasma-enhanced CVD using template porous alumina substrate. The layers possess of specific non-planar morphology and contain silicon nanocrystals of 2-4 nm diameter, as well as ??bunches?? of elongated nanocrystals composing honeycomb-like net. The results obtained could be used in new composite materials and structures...
In this talk we will discuss issues related to technology for dense photonic integration based on silicon platform, and review two alternatives to achieve this goal within the diffraction limit; photonic nanowires and photonic crystal waveguides. We will also present examples of our demonstrators to illustrate the feasibility of photonic wires for device miniaturization and benefits offered by photonic...
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