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Electric-field assisted decomposition of gas molecules such as SiCl4 and SF6 was used near a conducting AFM tip to directly deposit, etch and pattern nanometer-scale silicon structures. Deposition required around + 50 MV/cm (~+30 V) while etching could be achieved at lower fields around -10 MV/cm (~-10 V) with the voltage as applied to the tip. This technique is versatile and can deposit/pattern dielectrics...
Single step growth of crystalline silicon on insulator (c-SOI) substrates based on rare earth oxide (REO) insulator layers are presented. Growth of crystalline REOs on silicon is possible due to their unique lattice matching to twice the lattice spacing of silicon. The single crystal nature of REOs make further silicon overlayer growth with moderate defect densities possible. In this paper we present...
A-axis preferred orientation AlN thin films are deposited on Si(100) substrates by radiofrequency-assisted metal organic chemical vapor deposition method. Use high-purity nitrogen as nitrogen precursor and trimethyl-aluminum as aluminum precursor, respectively. Crystalline quality, surface morphology and other properties of the films are investigated by X-ray diffraction and scanning electron microscope...
Recently, Ge has been intensively studied as a light emission material that emits at ~1.5 μm, as it has been theoretically proven to be a promising candidate to realize Si-based light source for on-chip and chip-to-chip communications. In this paper, photoluminescence (PL) is reported from heavily phosphorus (P)-implanted epitaxial Ge thin films on Si. Sheet resistance has been measured to characterize...
In this work, the effect of substrate position on the formation of ZnO nanostructures synthesized by thermal evaporation of zinc oxide (ZnO) and carbon nanotubes (CNTs) on silicon substrate is investigated. The multi-wall CNT powder made by chemical vapor deposition was mixed with ZnO powder with a molar ratio of 1:1. The source material was put into the middle of chamber while Si substrates were...
The size of Si nanocrystals in silicon rich oxide has been varied by depositing this material in multilayer arrays. They are possible candidates for one dimensional quantum devices. A study based on TEM, Raman and XRD measurements is presented.
The different thickness polysilicon films were prepared by low pressure chemical vapor deposition. The microstructures of samples were observed by X-ray diffraction, scanning electron microscope and transmission electron microscope. The piezoresistive properties of samples were tested. The experimental results show that under high doping concentration, the gauge factor of polysilicon nanofilms is...
Investigations on the piezoresistive effect of poly-silicon nanofibns (PSNFs) have not been presented, since it is considered that their piezoresistive properties can become worse with film thickness decreasing. However, our experimental results indicated that the PSNFs (~100nm in thickness, even thinner) had a high gauge factor (>30) and low temperature coefficients of resistance and gauge factor,...
The influence of film structure on temperature characteristics of polysilicon nanofilms (PSNFs) was reported in this paper. Samples were deposited by LPCVD with different film thickness and deposition temperature. The microstructure of films was characterized by SEM, TEM and XRD. By measuring the resistivity and the gauge factor of samples at different temperatures, temperature coefficients of the...
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