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In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed. This model is derived by solving the Poisson's equation with the parabolic potential approximation, channel length transformation and conformal mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed...
The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (Vth) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The Vth model can be used for the integrated circuit designers.
A new technique to calculate the channel electric field in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region is presented. 2D Poisson's equation is solved in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation...
ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the traditional charge-sheet surface potential model. The channel potential of the bulk MOSFET is obtained by solving Poisson equation and an accurate current expression is obtained base on it. Taking Pao-Sah model as a standard, the relative errors of the charge-sheet model may be as large as 4% in the saturation...
In this paper, by solving the 1-D Poisson equation using appropriate boundary conditions, we report a closed-form surface potential solution for all the three surfaces (gate oxide-silicon film interface, silicon-film-buried oxide interface, and buried oxide-substrate interface) of fully depleted silicon-on-insulator (SOI) MOSFETs by considering the effect of substrate charge explicitly. During the...
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