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Market size of high-brightness LED lighting has been rapidly growing upon the continual improvement of quantum efficiency and light extraction. However some key breakthroughs must be made before this technology can be fully adopted into the broad market, such as efficient thermal dissipation and low manufacturing cost. A major portion of cost of an LED module falls in the packaging processes after...
This paper presents the packaging development of high power AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. Our packaging structure is designed on the device periphery surface for enhancing Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device...
c-axis oriented GaN nanowires (NWs) grown on Si(111) using nitrogen plasma assisted molecular beam epitaxy (MBE) offer promising new approaches for realizing efficient LED technology. The nanowires grow remarkably free of defects, suggesting that eventual LED structures may operate with high quantum efficiencies. Furthermore, the dense NW morphology offers LED configurations with high light extraction...
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