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This paper reports on the ZnO film structures obtained by MOCVD method on Si substrates. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.
Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More...
This paper reports the successful growth and characterization of thin film transistors based on MOCVD (metalorganic chemical vapor deposition) grown ZnO with best so ever reported performance. Highly conducting (<;0.01Ωcm) p-type (111) silicon substrates were used to achieve a low resistive backside gate. A thin, 20 nm dielectric SiO2 layer was then deposited by PECVD. A modified Aixtron 200/4...
Phosphorus doped ZnO quantum dots (QDs) have been fabricated on Si substrates by metal organic chemical vapor deposition method without using additional thermal activation processes. Single-crystal phosphorus doped ZnO quantum dots (QDs) have the average diameter of 20 nm and show preferred orientation with (001) direction. The incorporation of phosphorus in ZnO QDs was identified by x-ray photoelectron...
In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning...
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