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There is consensus in the IC industry that fully depleted devices will be the solution to the increasing challenges of device scaling towards nodes 20nm and 15nm. Fully depleted (FD) devices with undoped channels eliminate the threshold voltage VT variability due to random dopant fluctuation (RDF) reducing the overall VT variability by over 60%. For a given power supply FD devices have superior short...
The current status of SOI technology using wafer bonding is reviewed and its technological positioning in CMOS scaling is discussed. While bulk CMOS technology is encountering various kinds of critical issues, SOI technology using wafer bonding provides unique solutions by virtue of its flexible material design. Mobility enhancement through strained-SOI (sSOI) or optimization of crystal orientation...
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