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This paper describes the impact of device scaling on phase noise in SiGe HBT tunable active inductor oscillator (TAIOs), which has recently emerged as a strong contender for RF and mixed signal applications. The relative contributions of the broadband (thermal and shot noise) and low frequency (1/f noise) noise sources were examined. The measured phase noise results reveal that device scaling increases...
A dielectric resonator oscillator (DRO) based 19 GHz downconverter is presented, which has been integrated in a 200 GHz fT SiGe production technology. The circuits, a negative resistance block and a mixer, have been designed differentially. The DRO is optimized for low phase noise and operates at typically 18 GHz. The mixer converts the by-4-devided signal of a 77 GHz fundamental oscillator to around...
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