This paper describes the impact of device scaling on phase noise in SiGe HBT tunable active inductor oscillator (TAIOs), which has recently emerged as a strong contender for RF and mixed signal applications. The relative contributions of the broadband (thermal and shot noise) and low frequency (1/f noise) noise sources were examined. The measured phase noise results reveal that device scaling increases the contribution from 1/f noise (near carrier), whereas, decreases the contribution from shot and thermal (far carrier).