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This paper describes very high frequency (10–200 MHz) switched-mode power converters using custom GaN chips with integrated power switches and gate drivers, allowing standard logic-level PWM control inputs. Circuit design techniques are described in depletion-mode 0.15μm RF and 0.25μm switch GaN-on-SiC processes, including integration of gate-drive and level translation circuits. Operating from up...
This paper presents a combination of dynamic gate and drain biasing techniques applied to a S-Band − 10 W GaN power amplifier. A GaN-based drain supply modulator (DSM) and an integrated gate biasing circuit have been built and connected to a GaN RF power amplifier (RFPA). The complete circuit architecture is then implemented in a test bench for the study of the envelope tracking power amplifier (ETPA)...
This paper presents the design of a GaN HEMT based boost DC/DC converter and a dynamic supply modulator suitable for DC to RF power conversion improvements in RF transmitters. This work addresses a contribution to energy efficiency enhancements of active phased-array antennas. A main aspect reported here concerns a circuit implementation of a boost converter and its specific gate driver in GaN technology...
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