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This paper presents a performance evaluation of an original highly efficient and linear GaN-HEMT Vector Power Modulator (VPM) based on the design of a two-stage saturated variable gain (SVG) amplifier and a multi-level discrete supply modulator (SM). The proposed novel architecture for transforming a digital baseband data stream into an RF Vector modulated power waveform (RF Power DAC) is validated...
This paper presents a 2.5 GHz fully integrated Power Amplifier (PA) in 65-nm bulk CMOS TSMC process, for use in 4G LTE unmanned aerial vehicle (UAV). The proposed reconfigurable PA architecture of four sub PA cells, combined with Power Cell Switching (PCS) technique allows the high backoff output power level required by the LTE standard. The circuit presents saturated output power of +29.5 dBm, a...
In this paper, a novel concept for efficient and wideband, S band - 25W power modulator designed by taking the advantages of high voltage (50V) GaN HEMT technology is reported. The main objective of this study is to demonstrate the interest of merging both amplitude modulation and power amplification functions without the use of mixer in order to get high efficiency performances (>45%). To fully...
Error Vector Magnitude (EVM) is used by communication systems designers as one way to express distortions in digital communications. These distortions may come from initial modulator amplitude and phase imbalances, from linear distortions or non-linear distortions in the transmission chain. It is a good indicator of power amplifiers non-linearity. We propose to use a closed form method based on cross-correlation...
This paper reports on the first experimental characterizations and modeling process of a MASMOS® transistor with a classical model, largely used for the modeling of other transistors. From DC IV and S-parameters measurements a large signal model (LSM) has been carried out. The great interest of this model is to allow a simulation time reduced by a factor of 100 compared to foundry model, like BSIM3...
This paper presents a combination of dynamic gate and drain biasing techniques applied to a S-Band − 10 W GaN power amplifier. A GaN-based drain supply modulator (DSM) and an integrated gate biasing circuit have been built and connected to a GaN RF power amplifier (RFPA). The complete circuit architecture is then implemented in a test bench for the study of the envelope tracking power amplifier (ETPA)...
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