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In this paper, a novel concept for efficient and wideband, S band - 25W power modulator designed by taking the advantages of high voltage (50V) GaN HEMT technology is reported. The main objective of this study is to demonstrate the interest of merging both amplitude modulation and power amplification functions without the use of mixer in order to get high efficiency performances (>45%). To fully...
This paper describes the realization and characterization of microwave 3-D printed loads in rectangular waveguide technology. Several commercial materials were characterized at X-band (8–12 GHz). Their dielectric properties were extracted through the use of a cavity-perturbation method and a transmission/reflection rectangular waveguide method. A lossy carbon-loaded Acrylonitrile Butadiene Styrene...
This paper presents a combination of dynamic gate and drain biasing techniques applied to a S-Band − 10 W GaN power amplifier. A GaN-based drain supply modulator (DSM) and an integrated gate biasing circuit have been built and connected to a GaN RF power amplifier (RFPA). The complete circuit architecture is then implemented in a test bench for the study of the envelope tracking power amplifier (ETPA)...
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