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A comprehensive study of dielectric modulated (DM) drift regions for power devices is presented in this paper. The performance of this structure is theoretically analyzed and compared with both conventional and superjunction (SJ) structures. In this paper, an analytical model for DM drift regions with cylindrical cells is proposed and compared with linear cells. An optimal tradeoff between breakdown...
In Server industry, simulation process is usually separated into pre-layout and post-layout phases. The pre-layout simulation focuses on finding the solution space or choosing a better topology. For post-layout simulation, Intel Channel Check Tool (CCT) [1][2][3] methodology has become popular and widely used for past two or three years. CCT is the board-level interconnect electrical performance characterization...
As CMOS technology goes into the nanoscale regime, the impact of layout on the device performance becomes increasingly important. In this paper, we propose a physics-based analytical model for Layout Dependent Effects (LDE) due to shallow trench isolation (STI) stress in 28 nm technology using “gate-last” process (Replacement Gate — RMG). The impact of active size and active width are considered and...
The majority of time and effort spent to analyze and design a PC interconnect is not well served by commercial SI/PI tools. This paper examines those usage models and suggests improvements that would result in higher adoption rates of commercial SI/PI tools.
The design of SOI-based SoCs has traditionally been the province of a few companies that could afford very labor-intensive custom design approaches - microprocessor companies looking for performance or aerospace companies looking for rad-hard electronics. In recent years, SOI has become a more attractive option for SoC design teams that have traditionally targeted bulk silicon. With current improvements...
This paper proposes a feed-forward type of SiP (System-in-Package) design environment to improve SiP products design. The proposed environment enables accurate performance prediction including signal integrity and thermal dispersion at initial design stages. This design environment is contributes to finding design constraints from initial package layout at early design stages. By feeding these constraints...
A unified, semi-empirical model of etch depth for a Bosch-type, inductively coupled plasma (ICP), silicon deep reactive ion etch (DRIE) process is reported. Aspect ratio dependent etch modulation (ARDEM) is modeled using Coburn and Winters' approach with Dushman's approximation of the vacuum conductance correction factor. The use of microdonut test structures to extract model parameters is described...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
Recent silicon process technology advancements have given chip designers integration capabilities never were possible before, and have led to a new wave of complex ASICs (applied specific integrated circuits). These advanced processes come with new challenges. This paper presents some of the challenges in deep submicron technologies, which require new design practices. We demonstrate some issues related...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
The challenges of deriving early-adopter competitive advantage, even with fabless access to process technology, through leveraging features offered by the advanced, and possibly disruptive, process technologies in real SoC products, are outlined. A structured methodology for addressing these challenges, and bridging the gap between process and design, sufficiently early in the development cycle to...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
As mainstream processing technology advances into 65 nm and beyond, many factors that were previously considered secondary or insignificant, can now have an impact on chip timing. One of these factor is inversed temperature dependence (ITD). As supply voltage continues scaling into sub-IV territory, delay-temperature relationship can be reversed on some cells, meaning that device switching time may...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
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