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Charge collection of a 6H-SiC p+ n diode has been studied. The collected charges of the diode are measured using a single alpha particle strike at various reverse bias voltages, then analyzed using both the low-injection charge collection model and the DESSIS device simulator. It is found that the total collected charges at lower bias voltages cannot be well understood based on the low-injection model...
The ruggedness of SiC pn diode was investigated. The SiC pn diode was confirmed to operate at over 800°C, a higher temperature than Si device's destruction temperature, and to endure a large current of over 1000A (2000A/cm2) per one chip. The resistance of the diode showed a positive temperature coefficient until its destruction. This was different from the destruction of Si pn diodes.
The following paper will give an overview about the main reliability aspects of silicon carbide power devices. After a brief review of the key device concepts it covers reliability topics of bipolar devices, Schottky diodes, metal oxide semiconductor field effect devices, and junction field effect devices. Special attention is paid to the influence of the different reliability topics on the commercialization...
High reverse current of available SiC diodes cannot be attributed only to bulk crystalline lattice defects. Significant contribution is possible from the diode termination due to leakage through the semiconductor dielectric interface resulted from the passivation process.
In this paper, junction temperature behavior of Si power MOSFET and SiC diodes when conducting significant current is investigated in detail by experiment and theoretical analysis. The dynamic variation and steady-state values of device junction temperatures when carrying different currents are studied. The results show that the device steady-state junction temperature versus current curve rises sharply...
Silicon as a semiconductor material is well established and first choice for the vast majority of devices. However, due to continuous device optimisation and improvements in the production process, the material properties are more and more the limiting factor. Workarounds like the super junction stretch the limits but usually at substantial cost. So a lot of effort is spent into the more straight...
This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV and 10 kV SiC DMOSFETs have been produced with die areas greater than 0.64 cm2. SiC JBS diode dies also rated at 1.2 kV and 10 kV have been produced with die areas exceeding 1.5 cm2. These results demonstrate that SiC power devices provide a significant leap forward...
The application of SiC devices (as battery interface, motor controller, etc.) in a hybrid electric vehicle (HEV) will benefit from their high-temperature capability, high-power density, and high efficiency. Moreover, the light weight and small volume will affect the whole power train system in a HEV, and thus performance and cost. In this work, the performance of HEVs is analyzed using PSAT (powertrain...
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