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p-microcrystalline-silicon/n-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential increasing the light-incident surface texturing and it avoids...
Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity...
Large band gap materials such as diamond (5.5 eV) and AlN (6 eV) offer the possibility of making MEMS structures out of a single material by varying the doping level to achieve the semi-conducting, metallic and insulating (undoped) properties needed in a typical MEMS structure. Polycrystalline diamond (poly-C), which has recently been used in the fabrication of BioMEMS, RFMEMS, and MEMS packaging,...
This research is devoted to the study of formation processes of CoSb3 skutterudite phase in nanodimensional CoSb3(30 nm)/SiO2(100 nm)/Si(001) film systems.
P-type La0.5Sr0.5CoO3 (LSCO) and n-type 0.3 wt% Al-doped ZnO (AZO) thin films were obtained by radio-frequency magnetron sputter under different controlled Ar/O2 atmosphere. The structure of the heterojunction was p-LSCO (~125 and 250 nm)/n-AZO (~300 and 600 nm)/Si wafer and show good rectifying behavior.
In this paper, we present the electrical properties evolution, following a dry thermal oxidation, of LPCVD polycrystalline silicon layers. The polysilicon thin films deposited on monosilicon substrates, at different temperatures (Td = 520 to 605degC), are highly in situ boron doped (2times1020 cm-3). The thermal oxidation treatment was carried out under dry oxygen atmosphere at the temperatures Tox...
Boron doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films are deposited using layer-by-layer technique in radio frequency (RF) plasma enhance chemical vapor deposition system. Studies about the influence of gas pressure, RF power density and buffer layer in i/p interface on the microstructure and electrical properties of Boron doped nc-Si:H thin films have been carried out. The experimental...
This work presents the influence of post-annealing on mechanical and electrical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited on Corning 7059 glass and Si substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The basic mechanical properties of the films are measured by means of nanoindentation system. Using a four point resistivity...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
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