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Next generation mobile systems are expanding their spectrum to millimeter wave frequency bands to support data rates up to multigigabits per second. The power amplifier is a critical element of the radiofrequency front-end in terms of power consumption and bandwidth. In this work, we present the design of a fully integrated wideband high efficiency class-J power amplifier. Post-layout simulation results...
This paper presents a wideband high efficiency continuous class-F (CCF) power amplifier (PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic resonance network is used to shape the current and voltage waveforms for the proposed CCF CMOS PA. Further, a transformer with a tunable coupling-coefficient (ktune) is incorporated in the tuned load network to address the detrimental...
This paper presents a design approach for the output matching networks (OMN) required in continuous class B/J power amplifiers (PA). Design equations of the OMN are derived and used to design a class-B/J PA that covers the frequency band from 2.2 GHz to 3.45 GHz. The PA uses the LDMOS device available in the 130 nm SOI technology from STMicroelectronics. Simulation results show that the PA has an...
This paper demonstrates a power amplifier (PA) design procedure for achieving high peak efficiency over a wide bandwidth. A harmonic load-pull is performed over the desired frequency range resulting in theoretically optimum load impedances. Analysis of wide bandwidths where the harmonic bands overlap with the fundamental band and lower harmonic bands are performed. Practical impedances are found through...
This paper discusses the design of wideband Doherty amplifier. Design strategy basically depends upon the elimination of bandwidth constraints in basic Doherty amplifier as pointed by the investigation, which are quarter wave impedance transformer and capacitance at the transistor output terminal. In this frame work, high efficiency can be achieved by designing wideband Doherty power amplifier which...
In today's generation, the wireless communication system is developing rapidly, due to which new standards like WIMAX and 4G Long Term Evaluating(LTE) with a purpose of achieving high data rate result in high end applications such as high speed internet, video conferences and broadband width. These applications require mobile base stations at the transmitter as well as at receiver (T/R) to support...
This paper presents a new method to design high efficiency and wideband power amplifier (PA). Based on the output parasitics network of MOSFET, this method shifts the optimum load impedances from the intrinsic plane to the package plane, which are obtained by the continuous PA theory and then rectified elaborately by multi-harmonic bilateral-pull technology, in order to make the second harmonic load...
Multi-beam wideband communication active electronically scanned arrays have power amplifiers with nonlinear responses. Modeling these nonlinear responses is important for accurately determining the harmonics and intermodulation products, since they have their own radiation patterns in addition to the radiation pattern of the fundamental frequency. We compare the Rapp and polynomial power amplifier...
This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered, resulting in superior...
In this paper, a novel wideband GaN HEMT power amplifier (PA) using microstrip radial stub (MRS) in both input and output matching networks to suppress harmonic components of 2.14 GHz is analyzed, fabricated, and tested. The angle subtended by MRS and the bottom length of MRS are analyzed for harmonic suppressing purpose. The wideband harmonic suppressing characteristic of MRS is compared with normal...
The use of resistive loading at higher harmonics in wideband power amplifier design is proposed. Although the theoretical efficiency of such operation is lower than other classes the significantly simplified load network design potentially allows for multi-octave realizations. A decade bandwidth (0.4–4.1 GHz) GaN HEMT power amplifier was thereby designed, delivering more than 40 dBm output power with...
A novel, highly efficient and broadband RF power amplifier (PA) operating in “continuous class-F” mode has been realized for first time. The introduction and experimental verification of this new PA mode demonstrates that it is possible to maintain expected output performance, both in terms of efficiency and power, over a very wide bandwidth. Using recently established continuous class-F theory, an...
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a...
This paper describes a new methodology of wideband and highly efficient design with packaged transistors using behavioral model in CAD software. The Multi-Harmonic Volterra (MHV) model of a 10W GaN transistor has been extracted from Time domain Load-Pull measurements, and has been implemented into CAD software for the design procedure. The designed power amplifier exhibits, in measurement, a drain...
In this paper we evaluate the generation of a multi-tone set for characterizing the behavior of nonlinear radio frequency (RF) modules in its out-of-band when harmonic sampling is used as digitizer. The purpose is to provide the reader with a tool to select proper frequencies and record length for a given application and test-bed. The method is based on simulations and the use of Sidon sequences....
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