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In this work1 we present the design of a fully integrated wideband high efficiency power amplifier for 5G applications. The amplifier consists of two single ended common source stages, with a class-J power stage in the 28nm CMOS FD-SOI technology. Post-layout simulation results show a broadband behavior of the amplifier over 12 GHz of bandwidth with a saturated power of 16.2 dBm and a peak power added...
Next generation mobile systems are expanding their spectrum to millimeter wave frequency bands to support data rates up to multigigabits per second. The power amplifier is a critical element of the radiofrequency front-end in terms of power consumption and bandwidth. In this work, we present the design of a fully integrated wideband high efficiency class-J power amplifier. Post-layout simulation results...
This paper presents a wideband high efficiency continuous class-F (CCF) power amplifier (PA) at mm-Wave frequencies for the first time. A tuned load with a high-order harmonic resonance network is used to shape the current and voltage waveforms for the proposed CCF CMOS PA. Further, a transformer with a tunable coupling-coefficient (ktune) is incorporated in the tuned load network to address the detrimental...
The design of RF transceiver can be achieved with low cost and full integration, is possible only because of the advanced CMOS technology scaling. Power amplifier (PA) is one of the most important and power hungry blocks of wireless communication system. For achieving the maximum efficiency of PA the new hybrid class EF introduced with 2 stages PA. RF Power amplifier with given frequency range has...
This paper summarizes the developments of millimeter-wave (mmW) CMOS power amplifiers (PAs) at University of Electronic Science and Technology of China in recent years. Harmonic control technology and inverse Class F technique are used to improve the power added efficiency (PAE) for mmW CMOS PAs effectively. Moreover, by realizing symmetrical voltage coupling between transformer primaries and secondary...
In this work a design flow for class C radiofrequency (RF) power amplifiers (PA) with on-chip output networks in nanometric technologies is presented. This is a new parasitic-aware method intended to reduce time-consuming iterations which are normally required in fully-integrated designs. Unlike other methods it is based on actual transistors DC characteristics and inductors data both extracted by...
Class D amplifiers are becoming the most feasible solution for embedded audio application. However, distortions due to the non-linear nature of switching stage are the main drawback for this amplifier topology. This paper discusses the design and implementation of high fidelity audio class D using sliding mode control scheme. This design method proves to be a cost effective solution for industrial...
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