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The development of the MilliSecond Anneals (MSA) technology allows the use of short dwell time coupled with a high peak temperature in order to significantly reduce the global thermal budget. These points are fundamental in the phase transformation occurring in silicide materials: the high temperature allows the phase change and the short dwell time reduces the materials ability to diffuse and create...
A homogeneous emitter designed for a high efficiency Si solar cell needs to fulfill specific requirements: (1) a low surface concentration of dopants and (2) a good contact resistance. The emitter formation is studied in detail for an optimized POCl3 diffusion scheme and for plasma doping.
We fabricated a novel type MOSFET with inversion layer source/drain extensions formed by Cs implantation and segregation at SiO2/Si interfaces beside the gate and demonstrate that it has significant immunity to short channel effect, gate induced drain leakage, and transient enhanced diffusion of channel boron impurities, compared to conventional MOSFETs. The stability of Cs in the device is also confirmed...
Palladium (Pd) diffusion from a surface layer enhanced by defects from a helium (He) irradiation is shown to provide a local lifetime control in a power p-i-n diode annealed between 350degC and 700degC. An open-circuit voltage decay lifetime measurement is used to identify temperature ranges in which one of two lifetime control mechanisms takes part. Spreading resistance measurements show the doping...
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