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Total ionizing dose effects in analog configurable application specific integrated circuits such as analog gate array and programmable analog gate array were analyzed. Dominant failure mechanisms and potentially radiation sensitive internal units were determined within −60…+125C temperature range. +125C area corresponds to the minimal radiation hardness.
TID effects in the metal-insulator-semiconductor field-effect transistors (RADFETs) were experimentally investigated at the different chip temperatures by means of measurements the electrical characteristics before, during and after irradiations in wide range of gate voltages.
Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.
This work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The measurement system allowed various electrical parameters of the voltage references to be measured during irradiation to 100 krad(Si) and the subsequent 50 day period of annealing. The experimental results...
Two new types of electronic cards have been tested in CERN’s CHARM irradiation facility. The cards are a complete redesign of a programmable voltage power supply and a revision of a conditioning card used for resistance temperature sensors. The power supply is adjustable between 0 to 60 Vdc and 0 to 4 A; in the ac mode power is adjusted by using a Pulse Width Modulation technique with 230 Vac and...
TID results are presented for LM185 Micropower Voltage Reference operated under various bias conditions and temperatures. Higher operational temperatures and biased devices are more sensitive to TID degradation suggesting reduced end-of-life performance.
This paper presents the detailed design, working principle and testing of a thermally independent irradiation solar sensor. The sensor is based on a photoelectric cell, and incorporates a sensor circuit which assures proper short circuit conditions and accomplishes temperature compensation as well. Our sensor sensitivity is 3 mV/W/m2 and resolution is 0.5 W/m2. Mean error of the compensated output...
In experiments at Large Hadron Collider detectors and electronics will be exposed to high fluxes of photons, charged particles and neutrons. Damage caused by the radiation will influence performance of detectors. It will therefore be important to continuously monitor the radiation dose in order to follow the level of degradation of detectors and electronics and to correctly predict future radiation...
Nowadays the importance of solar cells and R&D in this field is steadily increasing. The most important parameter of a solar cell is the generated power, which can be enhanced by use of solar tracking. For a correct determination of the tracking system's efficiency an irradiation sensor is necessary, because the irradiation from the sun changes constantly. This sensor device is placed on the tracker's...
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