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In order to investigate more accurately transport mechanisms through SiO2/HfO2 gate stacks, CV and IV measurements have been performed on several samples featuring different interfacial layer or HfO2 thicknesses, for a large range of temperature (80 K to 400 K). Experimental gate currents have been found to have very weak temperature dependency when plotted versus total charge, except on thicker stacks,...
The interface trap density of fresh TiN/TaN gated HfO2/SiO2/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectrics...
Detailed measurements of front and back channel characteristics in advanced SOI MOSFETs (ultrathin film, metal gate, selective epitaxy of source/drain) are used to reveal the transport properties at the corresponding Si/high-K (HfO2/HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage and subthreshold...
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