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The tunneling assisted charge exchange on the inner interface of high dielectric constant (high-k) dielectric stacks has been studied. The charging and discharging of traps existing at the HfO2/SiNx interlayer increase the transient capacitance amplitude, and so deep level transient spectroscopy (DLTS) measurements provide overestimated interfacial state density (Dit) values. This effect is quite...
In order to investigate more accurately transport mechanisms through SiO2/HfO2 gate stacks, CV and IV measurements have been performed on several samples featuring different interfacial layer or HfO2 thicknesses, for a large range of temperature (80 K to 400 K). Experimental gate currents have been found to have very weak temperature dependency when plotted versus total charge, except on thicker stacks,...
Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectrics...
Detailed measurements of front and back channel characteristics in advanced SOI MOSFETs (ultrathin film, metal gate, selective epitaxy of source/drain) are used to reveal the transport properties at the corresponding Si/high-K (HfO2/HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage and subthreshold...
Fast and slow components of NBTI in ultra-thin (sub-1-nm EOT) HfSiON/SiO2 and SiON pMISFETs were investigated in detail by using a separation method of the two NBTI components during long-term stress. For both HfSiON and SiON dielectrics, the following results were commonly obtained: 1) fast and slow components have dasiaindependentpsila universalities of the DeltaVth vs. stress-time slope, and 2)...
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