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In the field of power electronics the requirements in size, weight, reliability, durability and ambient temperature are driving the operational temperature beyond the limits of current die-attach technologies. Common bonding agents such as solder and high conducting adhesives are more and more replaced by silver pastes which are pressure assisted sintered at low temperatures. The silver pastes provide...
In the year 2006 a ban of lead containing solders in the EU required the qualification of lead-free solder alloys. However, these do not provide the same characteristics as lead containing solders do. Also their costs are higher due to expensive machinery use and increased tin and silver contents. The aim of our research is to develop assemblies based on electrically conductive adhesives that have...
High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates, including the high-thermal-conductivity diamond, are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of thermal resistances at GaN–diamond...
We report the thickness and phase dependent thermal properties of Ge2Sb2Te5 (GST) films using electrical Joule heating thermometry (3ω method) and validate the data with optical thermometry. The intrinsic thermal conductivity of GST increases from 0.26 W/mK for the amorphous phase to 0.57 W/mK for the crystalline phase. The thermal boundary resistance between GST and Si3N4 films decreases from 134...
We describe a novel method to measure the thermal conductivity of thick films. Based on the analytical solution of a comprehensive 2-D film-substrate heat diffusion problem, we derived a simple empirical solution for determination of the thick-film thermal conductivity. We use the negative photoresist SU-8 as a thick film material, the use of lithography process and a simple instrument that can be...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
The present work aims at studying the cooling performance of a thermoelectric device that integrated with integrated heat spreader (IHS) on a flip-chip plastic ball grid array (FC-PBGA) package. The new thermoelectric device herein is fabricated on the metal substrates by flip-chip assembly process. Thermal performance of the new package was comprehensive studied. The thermal resistances of IHS with/without...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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