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As CMOS technology is scaled down, the supply voltage and gate capacitance are reduced, which results in the reduction of charge storing capacity at each node and increase of the susceptibility to external noise in radiation environments. In this paper, a novel hardened latch design is proposed and compared with the previous hardened latch designs using 32nm technology node. Extensive simulation results...
In this paper we investigate the effectiveness of iDDT-based testing in detecting resistive open defects for future CMOS technologies down to 22 nm taking into consideration the wide process variations associated with such technologies. The SPICE parameters that we use for such advanced models are taken from the predictive technology model (PTM) and the ranges of process variations are taken from...
Two modified regulated cascode amplifier (RCA) structures are presented that reduce the output compliance voltage requirements of conventional RCA. One structure utilizes a push-pull amplifier to enhance output resistance whereas the other structure incorporates a level shifter in the conventional RCA structure. P-SPICE simulations have been used to validate the proposed structures at ??0.6 V for...
A novel low power with high performance low current comparator is proposed in this paper which comprises of low input impedance using a simple biasing method. It aimed for low power consumption and high speed designs compared with other high speed designs. The simulation results from HSPICE demonstrate the propagation delay is about 0.7 ns and the average power consumption is 130 muW for 100 nA input...
This paper presents a six-transistor (6T) single-ended static random access memory (SE-SRAM) bitcell with an isolated read-port, suitable for low-VDD and low-power embedded applications. The proposed bitcell has a better static noise margin (SNM) and write-ability compared to a standard 6T bitcell and equivalent to an 8T bitcell [1]. An 8Kbit SRAM module with the proposed and standard 6T bitcells...
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
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