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A simulation methodology for ultra-scaled InAs quantum well field-effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where strain is computed in an atomistic valence-force-field method, an atomistic sp3d5s* tight-binding model is used to compute channel effective masses, and a 2-D real-space...
In this paper for the first time, the logic performance of Schottky-gate In0.7Ga0.3As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc = 0.5 to 1.0V. The QWFET is shown to have measured drive current gain over the Si MOSFET for the entire Vcc range. Effective velocity (Veff) of the QWFET exhibits 4.6X-3.3X gain over the Si MOSFET. The high Veff enables 65% intrinsic...
The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics...
In this paper, we report the catalyst-free growth of nanowires utilizing selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) and their application to FETs. InAs nanowire FETs with Schottky gate resulted in large gate leakage current. But the leakage current was suppressed by using a MIS gate structure, and good saturation characteristics as FET were obtained.
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