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This work presents a GaN RF power amplifier with a common-source-common-gate (CS-CG) linearization technique, demonstrating device-circuit interactions using the physics-based MIT Virtual Source GaNFET (MVSG) model. A few device parameters are carefully chosen to investigate their effects on the circuit performance, as well as to suggest how to fabricate or choose a better GaN device for RF power...
This paper reports a 20 W Ka-band GaN high power MMIC (Monolithic Microwave Integrated Circuit) amplifier under continuous wave (CW) operation. The one-finger large signal models were made to take account of both the phase difference of RF gate voltage at a gate feeder and thermal effect. By using this model, the gate pitch length of unit cell transistor was optimally designed to obtain maximum output...
This paper reports on a rectifier with 100 mW class dc output at 5.8 GHz using a gallium nitride (GaN) shottly barrier diode and silicon (Si) matching circuit. The originality of the study lies in its adaptation of the hybrid semiconductor integrated circuit (HySIC) technology that utilizes different types of semiconductors. We have completed the basic steps for developing a rectifier based on the...
A RF leakage phenomenon in GaN HEMTs on Si substrates is analyzed with taking atomic diffusion at buffer/substrate interface into consideration, and a novel physical model of RF leakage based on the analysis is proposed. The Al or Ga atoms are moved from buffer layer to Si substrate at an epitaxial growth. Then, an acceptor layer with high hole density and an inversion layer with high electron density...
In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.
This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology...
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results of measurements reveal the accuracy of this model under small and large signal conditions.
In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued from the Boltzmann general transport equation. Its large potential application field presently concerns...
In this paper, an extended Hammerstein architecture for dynamic behavioral modeling of GaN power amplifier (PA) is presented. Static strong nonlinearities, long-term linear memory effects and first-order nonlinear dynamics are considered in the model. The parameters of the proposed model are estimated by least square algorithm. For experimental identification and validation, a 20MHz four-carrier orthogonal...
GaN devices have significant advantages in power density, thermal characteristics, and voltage range over those based on conventional compound semiconductors or Silicon. With GaN, as in other materials systems there are significant advantages in cycle time and strength of design from use of TCAD. Here TCAD simulations of AlGaN/GaN HEMTs are shown to accurately match measured DC and small signal AC...
In this paper, a large-signal model for GaN HEMT transistors for designing RF power amplifiers is presented. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure is applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data...
A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new Ids formulation accurately predicts the asymmetric bell-shaped transconductance (gm) over a large drain-source bias range which is crucial in modeling high-power GaN HEMTs. A method of utilizing a combination of pulsed-gate (PGIV) and pulsed-gate-and-drain (PIV) IV measurements...
GaN FET technology is facilitating the development of a new level of high power solid state switching performance. FET switches are now obtaining RF power handling levels comparable and even exceeding conventional PIN and mechanical switches up thru microwave frequencies while still offering the traditional advantages common to GaAs switches.
HFETs fabricated with nitride-based wide bandgap materials are capable of producing high RF output power and are promising for the next generation radar and wireless communication systems. To take full advantage of this new kind of device, large-signal models suitable for use in commercial microwave circuit simulators are desirable, but existing models can only interpolate or fit data that has been...
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